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US 9,437,722 B2Granted
High-voltage vertical power component
AssigneesSTMicroelectronics (Tours) SAS, Universite Francois Rabelais
InventorsSamuel Menard, Gael Gautier
Life of this patent
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Abstract
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.
Claims5
A vertical power component, comprising:
- a silicon substrate doped with a first conductivity type and having an upper surface and a lower surface opposite said upper surface;
- a first well in the lower surface of said silicon substrate doped with a second conductivity type;
- a second well in the upper surface of said silicon substrate doped with the second conductivity type;
- a first insulating porous silicon ring surrounding said first well and having a lower surface aligned with the lower surface of the silicon substrate, a depth which exceeds a thickness of the first well and an upper surface in contact with the first conductivity type silicon substrate, said first insulating porous silicon ring in contact with a junction between the first well and the silicon substrate;
- and
- a second insulating porous silicon ring surrounding said second well and having an upper surface aligned with the upper surface of the silicon substrate, a depth which exceeds a thickness of the second well and a lower surface in contact with the first conductivity type silicon substrate, said second insulating porous silicon ring in contact with a junction between the second well and the silicon substrate;
- and
- wherein the first and second porous silicon rings are not in contact with each other.
5 more elements
Dependencies are inferred from the claim text.