Semiconductor device

A semiconductor device including a semiconductor substrate in which a semiconductor element is disposed, the semiconductor device comprising:

• a p-type body region disposed at one portion of the semiconductor substrate in a cross sectional view of the semiconductor substrate;
• an n-type drift region disposed below the p-type body region in the cross sectional view;
• a plurality of n-type emitter regions separated from the n-type drift region by the p-type body region and exposed on an upper surface of the semiconductor substrate;
• a trench extending from the upper surface of the semiconductor substrate, piercing the p-type body region and reaching the n-type drift region in the cross sectional view, wherein the trench comprises, in a plan view of the semiconductor substrate, a plurality of first trenches extending in a first direction and arranged at intervals in a second direction intersecting the first direction, and a plurality of second trenches extending in the second direction and arranged at intervals in the first direction;
• a gate insulation film disposed on an inner surface of the trench;
• a gate electrode disposed in the trench;
• a plurality of inter-trench regions, each of the plurality of inter-trench regions being a region between two adjacent first trenches;
• and
• a plurality of cell regions, each of the plurality of cell regions being a region defined by two adjacent first trenches and two adjacent second trenches,
• wherein the plurality of inter-trench regions comprises:
• a first inter-trench region;
• a second inter-trench region separated from the first inter-trench region by at least one of the inter-trench regions being interposed in between in the second direction;
• and
• a middle inter-trench region interposed in between the first inter-trench region and the second inter-trench region,
• the emitter regions are disposed in at least one cell region in the first inter-trench region, are not disposed in the middle inter-trench region, and are disposed in at least one cell region in the second inter-trench region, and
• each of the emitter regions is disposed at a position that is not in contact with the first trenches but is in contact with the two second trenches defining the corresponding cell region.