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US 9,437,716 B2Granted
Semiconductor device comprising a graphene wire
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Wada, Yuichi Yamazaki, Akihiro Kajita, Atsunobu Isobayashi, Tatsuro Saito
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Abstract
According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.
Claims13
A semiconductor device comprising:
- a metal layer provided above a substrate comprising a semiconductor element, the metal layer extending in a first longitudinal direction and having a convex cross-sectional surface in a plane perpendicular to the first longitudinal direction;
- and
- a graphene layer provided on the metal layer to surround a side surface and an upper surface of a convex portion of the metal layer, the graphene layer having a curved cross-sectional surface and extending in the first longitudinal direction,
- wherein the metal layer comprises a first portion which is flat and a second portion which is convex, and
- wherein the second portion has a tapered shape whose widths of upper and lower surfaces are different, and has surface (111) alignment.
2 more elements
A semiconductor device comprising:
- a metal layer provided above a substrate comprising a semiconductor element, the metal layer extending in a first longitudinal direction;
- and
- a graphene layer provided on the metal layer to surround a side surface and an upper surface of the metal layer, the graphene layer extending in the first longitudinal direction and having a convex cross-sectional surface with respect to the metal layer in a plane perpendicular to the first longitudinal direction,
- wherein the metal layer comprises a first portion having a first width and including the upper surface, and a second portion which is provided on the first portion and which has a second width smaller than the first width, the second portion having a tapered shape whose widths of upper and lower surfaces are different, and has surface (111) alignment, and
- wherein the graphene layer comprises a plurality of graphene sheets which are stacked, and a portion of end portions of the graphene sheets is in contact with the upper surface of the first portion of the metal layer.
2 more elements
Dependencies are inferred from the claim text.