US 9,437,709 B2 · Semiconductor device and fabrication method thereof

Abstract

A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A barrier material layer is formed on the QW material layer. The QW material layer is suitable for forming an electron gas therein. Thereby the short-channel effect is improved, while high mobility of the semiconductor device is guaranteed. In addition, according to the present disclosure, thermal dissipation of the semiconductor device may be improved, and thus performance and stability of the device may be improved.

Claims11

Dependent claims

A method of fabricating a semiconductor device, comprising:

providing a substrate structure including a substrate and a fin-shaped buffer layer formed over a surface of the substrate;
forming a Quantum Well (QW) material layer on a surface of the fin-shaped buffer layer, the QW material layer being suitable for forming an electron gas therein;
and
forming a barrier material layer on the QW material layer,
wherein the substrate further includes an insulating portion adjacent to the fin-shaped buffer laver, the insulating portion being formed along both sides of the buffer layer on the surface of the substrate which is not covered by the buffer layer, and
wherein the forming a QW material layer on the surface of the fin-shaped buffer layer comprises:
forming a QW material layer on the surface of the fin-shaped buffer layer that is not covered by the insulating portion.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/012,297Filed 1 Feb 2016 · division

Priority

CN 2013 1 032703813 Jul 2013

Published

US 2016/0149014 A126 May 2016

Granted

6 Sep 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/4732
Having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT: using Group III-V semiconductor material
H10D 30/478
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: the 2D charge carrier gas being at least partially not…
H10D 30/60
Field-effect transistors [FET]: insulated-gate field-effect transistors [IGFET]

Semiconductor device and fabrication method thereof

Life of this patent

Semiconductor device and fabrication method thereof

Life of this patent

Abstract

Claims11