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US 9,437,703 B2Granted
Non-volatile memory device including nano floating gate with nanoparticle and method for fabricating the same
AssigneeSK Innovation Co., Ltd.
InventorJun-Hyung Kim
Life of this patent
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Abstract
A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.
Claims19
A method for fabricating a non-volatile memory device, comprising:
- forming a tunneling insulation layer over a substrate;
- and
- forming a floating gate for charging and discharging of charges over the tunneling insulation layer,
- wherein the forming of the floating gate comprises:
- forming a linker layer including linkers over the tunneling insulation layer;
- forming metal ions over the linker layer;
- and
- forming metallic nanoparticles by growing from the metal ions,
- wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer over the tunneling insulation layer prior to forming the metallic nanoparticles.
6 more elements
A method for fabricating a non-volatile memory device, comprising:
- forming a tunneling insulation layer over a substrate;
- and
- forming a floating gate, suitable for charging and discharging of charges, over the tunneling insulation layer,
- wherein the forming of the floating gate comprises:
- forming dielectric material particle supporters over the tunneling insulation layer;
- forming a linker layer, including linkers, on a surface of the dielectric material particle supporters;
- forming metal ions over the linker layer;
- and
- forming metallic nanoparticles by growing from the metal ions,
- wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer over the tunneling insulation layer prior to forming the metallic nanoparticles.
7 more elements
Dependencies are inferred from the claim text.