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US 9,437,699 B2Granted
Method of forming nanowires
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Yung-Ta Li, Meng-Ku Chen
Life of this patent
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Abstract
According to another embodiment, a semiconductor structure is provided. The structure includes: a substrate; a first nanowire over the substrate; and a second nanowire over the substrate and substantially symmetric with the first nanowire.
Claims15
A method of forming nanowires, comprising:
- providing a substrate;
- providing a sacrificial material over the substrate;
- etching the sacrificial material to form a protrusion that comprises the sacrificial material;
- performing an epitaxial growth process to form a nanowire material symmetric with respect to the protrusion, the nanowire material including L-shaped portions that coat (i) sidewalls of the protrusion, and (ii) portions of the substrate;
- removing the sacrificial material;
- and
- removing portions of the nanowire material coating the substrate to provide two symmetric nanowires made of the nanowire material.
4 more elements
A method of forming nanowires, comprising:
- providing a substrate;
- providing a sacrificial material over the substrate;
- forming a mask over a top of the sacrificial material;
- etching the sacrificial material using the mask as a masking layer to form a protrusion that comprises the sacrificial material;
- providing a nanowire material symmetric with respect to the protrusion that coats sidewalls of the protrusion, wherein the mask has a width that is equal to that of the protrusion, the mask covering a top portion of the protrusion and leaving exposed the nanowire material coating the sidewalls of the protrusion;
- and
- removing the sacrificial material to provide two symmetric nanowires made of the nanowire material.
4 more elements
A method of forming nanowires, comprising:
- providing a substrate;
- forming a protrusion comprising a sacrificial material on the substrate;
- performing an epitaxial growth process to form a nanowire material symmetric with respect to the protrusion, the nanowire material including L-shaped portions that coat sidewalls of the protrusion and portions of the substrate;
- and
- removing (i) the sacrificial material, and (ii) portions of the nanowire material coating the substrate to provide two symmetric nanowires made of the nanowire material, wherein the removal of the sacrificial material exposes inner sidewalls of the nanowires.
2 more elements
Dependencies are inferred from the claim text.