Semiconductor device including a gate structure wrapped around a fin structure

A semiconductor device, comprising:

• a fin structure including
• a root portion, and
• an overhead portion arranged above the root portion and separated from the root portion;
• a gate structure wrapping around the overhead portion and including a gate dielectric;
• and
• an insulating structure arranged between the root portion and the gate dielectric of the gate structure.

A semiconductor device comprising:

• a substrate including lower and upper substrate portions;
• a fin structure formed from the upper substrate portion of the substrate and including
• a root portion that extends from the lower substrate portion of the substrate, and
• an overhead portion that is above and separated from the root portion;
• a gate structure wrapped around the overhead portion of the fin structure;
• a source/drain region at an end section of the overhead portion of the fin structure;
• and
• an arch structure between the gate structure and the source/drain region.

A semiconductor device comprising:

• a substrate including lower and upper substrate portions;
• a fin structure formed from the upper substrate portion of the substrate and including
• a root portion that extends from the lower substrate portion of the substrate, and
• an overhead portion that is above and separated from the root portion;
• a gate structure wrapped around the overhead portion of the fin structure and including a gate dielectric;
• and
• a dielectric layer between the root portion of the fin structure and the gate structure and having the same material as the gate dielectric of the gate structure.

A semiconductor device comprising:

• a substrate including lower and upper substrate portions;
• a fin structure formed from the upper substrate portion of the substrate and including
• a root portion that extends from the lower substrate portion of the substrate, and
• an overhead portion that is above and separated from the root portion;
• a gate structure wrapped around the overhead portion of the fin structure;
• and
• an epitaxial layer grown on the overhead portion of the fin structure.