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US 9,437,696 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJi-In Kim, Do-Youn Kim
Life of this patent
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Abstract
A semiconductor device includes a substrate having an element isolation region, a trench formed on the element isolation region, a gate electrode buried in the trench, and a plurality of active regions formed on both ends of the gate electrode, wherein a pin is formed under the gate electrode between the active regions.
Claims15
A semiconductor device, comprising:
- a substrate including an element isolation region;
- a trench formed in the element isolation region;
- a gate electrode buried in the trench;
- and
- a plurality of active regions formed under the gate electrode,
- wherein the element isolation region has an upper surface and a bottom surface of a fin structure formed under the gate electrode between two adjacent active regions, and
- wherein the gate electrode includes a first region and a second region, the first region of the gate electrode is directly contacted to the upper surface of the fin structure included in the element isolation region, and the second region of the gate electrode is directly contacted to the bottom surface of the fin structure included in the element isolation region.
4 more elements
A semiconductor device, comprising:
- a substrate having an element isolation region;
- a trench formed in the element isolation region;
- a gate electrode buried in the trench;
- and
- a plurality of active regions formed under the gate electrode,
- wherein the element isolation region is formed on the gate electrode and includes a fin structure formed under the gate electrode between two adjacent active regions, and
- wherein the gate electrode includes a first region and a second region, the first region of the gate electrode is directly contacted to an upper surface of the fin structure included in the element isolation region, and the second region of the gate electrode is directly contacted to a bottom surface of the fin structure included in the element isolation region.
4 more elements
A semiconductor device, comprising:
- a substrate having an element isolation region;
- a first trench formed in the element isolation region;
- a first gate electrode buried in the first trench;
- a plurality of active regions formed under the first gate electrode;
- a second trench formed in the element isolation region and in parallel to the first trench;
- and
- a second gate electrode buried in the second trench,
- wherein the element isolation region is formed under the first gate electrode between two adjacent active regions and includes a fin structure formed protrudedly on a bottom surface of the first trench, and
- wherein the first gate electrode includes a first region and a second region, the first region is disposed over an upper surface of the fin structure included in the element isolation region, and the second region is disposed over a bottom surface of the fin structure included in the element isolation region.
6 more elements
A semiconductor device, comprising:
- a substrate having an element isolation region and an active region defined by the element isolation region;
- trenches formed in the active region and the element isolation region;
- and
- a gate electrode buried in the trenches,
- wherein the trenches have a same depth in the active region and the element isolation region, and
- wherein the element isolation region have a fin structure formed under the gate electrode between two adjacent active regions, and
- wherein the gate electrode includes a first region and a second region, the first region of the gate electrode is directly contacted to an upper surface of the fin structure included in the element isolation region, and the second region of the gate electrode is directly contacted to a bottom surface of the fin structure included in the element isolation region.
4 more elements
Dependencies are inferred from the claim text.