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US 9,437,695 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorMasamune Takano
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
Claims4
A semiconductor device comprising:
- a semiconductor substrate having a recess extending from a surface of the semiconductor substrate in a depth direction to a recessed surface at a recessed depth, the recess being adjacent to an unrecessed portion of the semiconductor substrate, and the semiconductor substrate having a first semiconductor region of a first conductivity type;
- and
- a metal film provided on the surface of the semiconductor substrate on the unrecessed portion and on the recessed surface, wherein,
- a second semiconductor region of a second conductivity type is provided in the semiconductor substrate, and the second semiconductor region is contacting with the metal film on the recess.
1 more element
Dependencies are inferred from the claim text.