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US 9,437,689 B2Granted
Ga2O3 semiconductor element
AssigneesTamura Corporation, Nationai Institute of Information and Communications Technology
InventorsKohei Sasaki, Masataka Higashiwaki
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Abstract
A Ga2O3 semiconductor element includes: an n-type β-Ga2O3 single crystal film, which is formed on a high-resistance β-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type β-Ga2O3 single crystal film between the source electrode and the drain electrode.
Claims17
A Ga2O3-based semiconductor element, comprising:
- a β-Ga2O3 single crystal film that is formed on a main surface of a β-Ga2O3 substrate, the main surface being rotated from 50° to 90° with respect to a (100) plane;
- a source electrode and a drain electrode that are formed on a same side of the β-Ga2O3 single crystal film;
- a gate electrode that is formed on the β-Ga2O3 single crystal film between the source electrode and the drain electrode;
- a first region formed in the β-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled first dopant concentration;
- and
- a second region formed to surround the first region and including a controlled second dopant concentration lower than the controlled first dopant concentration,
- wherein the β-Ga2O3 substrate includes a p-type dopant to be a high electrical resistance.
4 more elements
Dependencies are inferred from the claim text.