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US 9,437,688 B2Granted
High-quality GaN high-voltage HFETs on silicon
AssigneePower Integrations, Inc.
InventorsJamal Ramdani, John P. Edwards, Linlin Liu
Life of this patent
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Abstract
A GaN HFET includes a silicon substrate with an Al2O3 layer above the silicon substrate. The Al2O3 layer has voids formed therein. A plurality of alternating GaN and AlN layers are above the Al2O3 layer. The GaN and AlN layers are under continuous compressive stress.
Claims7
A GaN HFET, comprising:
- a silicon substrate;
- an Al2O3 layer above the silicon substrate, the Al2O3 layer having voids formed therein;
- and
- a plurality of alternating GaN and AlN layers above the Al2O3 layer, wherein the GaN and AlN layers are under continuous compressive stress.
1 more element
A method of making a GaN HFET comprising:
- forming an amorphous film of AlSiO between a silicon wafer and an Al2O3 film on a surface of the silicon wafer;
- and
- depositing a plurality of alternating GaN and AlN layers above the Al2O3 layer.
Dependencies are inferred from the claim text.