Group III-V device with a selectively reduced impurity concentration
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
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Abstract
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
Claims20
A semiconductor structure comprising:
- a transition body having an impurity concentration that varies between a bottom surface and a top surface of said transition body such that a top surface impurity concentration of said transition body is less than or substantially equal to a bottom surface impurity concentration of said transition body;
- a group III-V intermediate body having a bottom surface over said transition body;
- a group III-V device layer over a top surface of said group III-V intermediate body;
- said group III-V intermediate body having a continuously reduced impurity concentration wherein a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface;
- said lower impurity concentration occurring at a depth below said top surface and remaining substantially constant from said depth to said top surface.
A semiconductor structure comprising:
- a transition body having an impurity concentration that varies between a bottom surface and a top surface of said transition body such that a top surface impurity concentration of said transition body is less than or substantially equal to a bottom surface impurity concentration of said transition body, and wherein said impurity concentration at least at one depth position between said top surface and said bottom surface is greater than said bottom surface impurity concentration;
- a group III-V intermediate body having a bottom surface over said transition body;
- a group III-V device layer over a top surface of said group III-V intermediate body;
- said group III-V intermediate body having a continuously reduced impurity concentration wherein a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface;
- wherein said group III-V intermediate body comprises a compositionally graded III-Nitride body having a first III-Nitride composition at said bottom surface and a second III-Nitride composition above said bottom surface.
A method comprising:
- fabricating a transition body having an impurity concentration that varies between a bottom surface and a top surface of said transition body such that a top surface impurity concentration of said transition body is less than or substantially equal to a bottom surface impurity concentration of said transition body;
- fabricating a group III-V intermediate body having a bottom surface over said transition body;
- fabricating a group III-V device layer over a top surface of said group III-V intermediate body;
- wherein fabricating said group III-V intermediate body comprises forming a continuously reduced impurity concentration such that a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface;
- said lower impurity concentration occurring at a depth below said top surface and remaining substantially constant from said depth to said top surface.
Dependencies are inferred from the claim text.