Back to results
US 9,437,670 B2Granted
Light activated test connections
AssigneeGlobalfoundries Inc.
InventorsNathaniel R. Chadwick, John B. DeForge, John J. Ellis-Monaghan, Jeffrey P. Gambino, Ezra D. Hall, Marc D. Knox, Kirk D. Peterson
Life of this patent
Estimating the term…
Abstract
A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.
Claims17
A semiconductor structure, comprising:
- a test circuit comprising a light activated test connection in a semiconductor device, wherein the light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test,
- wherein the semiconductor device is a single chip of a three dimensional stacked chip system;
- and
- the light activated test connection is sacrificial.
1 more element
A semiconductor structure, comprising:
- a test circuit comprising a light activated test connection in a semiconductor device, wherein the light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test,
- wherein the semiconductor device contains a silicon-based portion;
- the semiconductor device contains one or more silicon based devices;
- the light activated test connection is composed of Ge having a bandgap substantially less than that of silicon and that is between about 0.1 μm and about 1.0 μm thick in a vertical direction of the semiconductor device;
- and
- a light used for activating the light activated test connection has a wavelength of about 1350 nm.
3 more elements
A semiconductor structure, comprising:
- a test circuit comprising a light activated test connection in a semiconductor device, wherein the light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test,
- wherein the light activated test connection is on and contacting a barrier layer in the semiconductor device;
- and
- wherein the semiconductor device comprises:
- the barrier layer;
- a first contact pad in a first opening in the barrier layer and contacting a first conductive path;
- and
- a second contact pad in a second opening in the barrier layer and contacting a second conductive path.
5 more elements
A semiconductor structure, comprising:
- a test circuit comprising a light activated test connection in a semiconductor device, wherein the light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test;
- wherein the test circuit comprises the light activated test connection and a current source connected to a first input of a gate;
- and
- the current source is sized based on a leakage of the light activated test connection and a threshold of the gate.
1 more element
Dependencies are inferred from the claim text.