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US 9,437,654 B2Granted
Magnetic memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Chul Lee, Kwang-Seok Kim, Kee-Won Kim, Young-Man Jang, Ung-Hwan Pi
Life of this patent
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Abstract
Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.
Claims18
A magnetic memory device, comprising:
- a substrate;
- a plurality of first electrodes on a first plane on the substrate;
- a plurality of second electrodes on a second plane that is different from the first plane;
- and
- a magnetic tunnel junction (MTJ) structure between the plurality of first electrodes and the plurality of second electrodes, the MTJ structure including a first magnetic layer, a tunnel barrier layer and a second magnetic layer that are sequentially stacked on the plurality of first electrodes, and at least one of the first magnetic layer or the second magnetic layer including:
- a plurality of magnetic material patterns;
- and
- a plurality of insulation material patterns separating the plurality of magnetic material patterns from each other, wherein ones of the plurality of magnetic material patterns overlap with one of the plurality of first electrodes in plan view,
- wherein the one of the plurality of first electrodes comprises a first one of the plurality of first electrodes, and the ones of the plurality of magnetic material patterns comprise first ones of the plurality of magnetic material patterns that overlap with the first one of the plurality of first electrodes in plan view,
- wherein the plurality of first electrodes comprise a second one of the plurality of first electrodes, and the plurality of magnetic material patterns comprise second ones of the plurality of magnetic material patterns that overlap with the second one of the plurality of first electrodes in plan view, and
- wherein the plurality of magnetic material patterns comprise third ones of the plurality of magnetic material patterns that are between the first ones of the plurality of magnetic material patterns and the second ones of the plurality of magnetic material patterns.
8 more elements
A magnetic memory device, comprising:
- a plurality of first conductive lines extending in a first direction;
- a plurality of second conductive lines extending over the first conductive lines and in a second direction crossing the first direction;
- a magnetic tunnel junction (MTJ) structure between the plurality of first conductive lines and the plurality of second conductive lines, the MTJ structure including a first magnetic layer that comprises:
- a plurality of magnetic material patterns;
- and
- a plurality of insulation material patterns separating the plurality of magnetic material patterns from each other;
- a plurality of lower electrodes at intersection areas of the plurality of first conductive lines and the plurality of second conductive lines and between the plurality of first conductive lines and the MTJ structure, wherein ones of the plurality of magnetic material patterns overlap with one of the plurality of lower electrodes in plan view, and some of the ones of the plurality of magnetic material patterns only partially overlap with the one of the plurality of lower electrodes in plan view;
- and
- a plurality of upper electrodes at the intersection areas and between the plurality of second conductive lines and the MTJ structure.
6 more elements
Dependencies are inferred from the claim text.