Method of manufacturing imaging device

A method of manufacturing an imaging device including a pixel circuit unit and a peripheral circuit unit, the method comprising:

• forming a first insulator film that covers a first semiconductor region positioned in the pixel circuit unit, a second semiconductor region positioned in the peripheral circuit unit, and a third semiconductor region positioned in at least one of the pixel circuit unit and the peripheral circuit unit;
• removing one portion of the first insulator film, the one portion of the first insulator film being positioned on the second semiconductor region, and another portion of the first insulator film, the another portion of the first insulator film being positioned on the third semiconductor region, while remaining a first portion of the first insulator film, the first portion being positioned on the first semiconductor region;
• forming a second insulator film that covers the first semiconductor region, the second semiconductor region, and the third semiconductor region;
• removing one portion of the second insulator film, the one portion of the second insulator film being positioned on the first portion, and another portion of the second insulator film, the another portion of the second insulator film being positioned on the second semiconductor region, while remaining a second portion of the second insulator film, the second portion being positioned on the third semiconductor region;
• forming a metal film that covers the first portion, the second semiconductor region, and the second portion;
• causing the metal film and the second semiconductor region to react with each other to form a metal compound layer;
• and
• forming a third insulator film that covers the first portion, the metal compound layer, and the second portion, and forming a conductor member that penetrates the third insulator film, and comes in contact with the metal compound layer,
• wherein
• the first semiconductor region includes a floating diffusion region of the pixel circuit unit, the first portion of the first insulator film covers the floating diffusion region, and the one portion of the second insulator film, the one portion being positioned on the floating diffusion region, is removed.

A method of manufacturing an imaging device including a pixel circuit unit and a peripheral circuit unit, the method comprising:

• forming a first insulator film that covers a first polysilicon member positioned in the pixel circuit unit, a second polysilicon member positioned in the peripheral circuit unit, and a third polysilicon member positioned in the peripheral circuit unit;
• removing one part of the first insulator film, the one part of the first insulator film being positioned on the second polysilicon member, and another part of the first insulator film, the another part of the first insulator film being positioned on the third polysilicon member, while remaining a first part of the first insulator film, the first part being positioned on the first polysilicon member;
• forming a second insulator film that covers the first part of the first insulator film, the first part being positioned on the first polysilicon member, the second polysilicon member, and the third polysilicon member;
• removing one portion of the second insulator film, the one portion of the second insulator film being positioned on the first polysilicon member, and another part of the second insulator film positioned on the second polysilicon member, while remaining a second part of the second insulator film, the second part being positioned on the third polysilicon member;
• forming a metal film that covers the first part positioned on the first polysilicon member, and the second polysilicon member, and the second part positioned on the third polysilicon member;
• and
• causing the metal film and the second polysilicon member to react with each other.