Solid-state image pickup device

A solid-state image pickup device comprising:

• a plurality of pixels each including:
• a photoelectric conversion section that generates an electric charge in accordance with incident light;
• and
• a junction field-effect transistor that outputs an image signal in accordance with the electric charge generated by the photoelectric conversion section,
• wherein the solid-state image pickup device includes a first element isolation region using an insulator and a second element isolation region using a pn junction, the first element isolation region and the second element isolation region being arranged in a region in which the plurality of pixels are arranged, and
• a portion of the second element isolation region includes, and/or operates as, a drain region of the junction field-effect transistor, the junction field-effect transistor being of a lateral type.

A solid-state image pickup device comprising:

• a plurality of pixels each including:
• a photoelectric conversion section that generates an electric charge in accordance with incident light;
• and
• a junction field-effect transistor that outputs an image signal in accordance with the electric charge generated by the photoelectric conversion section,
• wherein the solid-state image pickup device includes a first element isolation region using an insulator and a second element isolation region using a pn junction, the first element isolation region and the second element isolation region being arranged in a region in which the plurality of pixels are arranged,
• wherein each of the plurality of pixels further includes a reset transistor that resets an electric charge stored in a gate region of the respective junction field-effect transistor, and
• wherein among a region between the junction field-effect transistor of at least one pixel of the plurality of pixels and a drain region of the reset transistor of at least one pixel of the plurality of pixels, a region between the photoelectric conversion section of at least one pixel of the plurality of pixels and the drain region of the reset transistor of at least one pixel of the plurality of pixels, and a region between the photoelectric conversion section of at least one pixel of the plurality of pixels and the junction field-effect transistor of at least one pixel of the plurality of pixels, two of the regions include the first element isolation region formed therein and the other region includes the second element isolation region formed therein.