Solid-state image capturing apparatus, method of manufacturing the same, and camera

A solid-state image capturing apparatus comprising:

• a semiconductor substrate including a first semiconductor region of a first conductivity type;
• a plurality of charge accumulation regions of a second conductivity type formed in the semiconductor substrate;
• a plurality of transistors formed in a semiconductor substrate, each configured to output a signal based on a charge accumulated in corresponding one of the plurality of charge accumulation regions;
• a second semiconductor region of the first conductivity type formed in a position deeper than the plurality of charge accumulation regions of the semiconductor substrate and shallower than the first semiconductor region, electrically conducted to the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region;
• and
• a third semiconductor region of the second conductivity type formed between the second semiconductor region and the first semiconductor region, and receiving a first power supply voltage,
• wherein the second semiconductor region is formed across a region including two or more transistors of the plurality of transistors in a planar view with respect to an upper surface of the semiconductor substrate, and is configured to supply a current to the two or more transistors upon receiving a second power supply voltage different from the first power supply voltage.