Solid-state imaging device
AssigneeSony Corporation
InventorsKazuki Nomoto, Kaneyoshi Takeshita, Hiroyuki Ohri
Life of this patent
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Abstract
A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.
Claims9
A solid-state imaging device comprising:
- a substrate;
- a photoelectric conversion section configured to convert incident light into a signal charge, the photoelectric conversion section being disposed on or above the substrate and including an impurity region having a first conductivity type;
- a first impurity layer disposed on or above the substrate, having a second conductivity type opposite from the first conductivity type;
- a floating diffusion section;
- a transfer section disposed between the photoelectric conversion section and the floating diffusion section and configured to transfer the signal charge from the photoelectric conversion section to the floating diffusion section;
- an amplifying section configured to amplify a voltage from the floating diffusion section;
- and
- an element isolation region at least partially surrounding the amplifying section.
Dependencies are inferred from the claim text.