Solid-state imaging element, manufacturing method, and electronic device
AssigneeSony Corporation
InventorNobuyuki Kuboi
Life of this patent
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Abstract
A solid-state imaging element includes a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which separates the photodiodes, in which the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate.
Claims17
A solid-state imaging element comprising:
- a semiconductor substrate where a plurality of photodiodes are arranged in a plane;
- and
- a separation section which separates the photodiodes,
- wherein the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate.
A method for manufacturing a solid-state imaging element which is provided with a semiconductor substrate where a plurality of photodiodes are arranged in a plane and a separation section which separates the photodiodes, the method comprising:
- forming trenches in the semiconductor substrate when forming the separation section;
- and
- forming a photoelectric conversion section by filling a material which has a high light absorption coefficient and a high quantum efficiency in the trenches.
An electronic device comprising:
- a solid-state imaging element which is provided with a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which separates the photodiodes,
- wherein the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate.
Dependencies are inferred from the claim text.