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US 9,437,631 B2Granted
Solid-state imaging device, manufacturing method of the same, and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorItonaga Kazuichiro
Life of this patent
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Abstract
A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.
Claims8
A solid-state imaging device comprising:
- a substrate with a pixel area;
- a gate electrode in the pixel area;
- a first photodiode in the pixel area and at one side of the gate electrode;
- and
- a second photodiode adjacent to the first photodiode in the pixel area,
- wherein,
- the second photodiode is closer to the gate electrode than the first photodiode, and
- the first photodiode is comprised of at least three impurity concentration regions arranged in a depth direction of the substrate, a bottom surface of the first photodiode being deeper in the substrate than a bottom surface of the second photodiode.
5 more elements
Dependencies are inferred from the claim text.