Pixel structure and method of fabricating the same

A method of fabricating pixel structure, comprising:

• providing a substrate;
• forming a first patterned conductive layer on the substrate, wherein the first patterned conductive layer comprises a first connection electrode and a second connection electrode, and the first connection electrode and the second connection electrode comprise conductive materials respectively;
• forming an oxide semiconductor channel layer on the substrate, wherein the oxide semiconductor channel layer has two opposite sides partially overlapping a top surface of the first connection electrode and a top surface of the second connection electrode respectively, and the first connection electrode and the second connection electrode are disposed between the oxide semiconductor channel layer and the substrate;
• forming a gate insulation layer on the substrate, wherein the gate insulation layer covers the oxide semiconductor channel layer, the first connection electrode and the second connection electrode;
• forming a second patterned conductive layer on the gate insulation layer, wherein the second patterned conductive layer comprises a gate electrode;
• forming a dielectric layer on the gate electrode and the gate insulation layer;
• forming a first contact hole in the gate insulation layer and the dielectric layer to at least partially expose the top surface of the first connection electrode, and a second contact hole in the gate insulation layer and the dielectric layer to at least partially expose the top surface of the second connection electrode;
• forming a third patterned conductive layer on the dielectric layer, wherein the third patterned conductive layer comprises a source electrode and a drain electrode, the source electrode is electrically connected to the first connection electrode through the first contact hole so as to form a complete source electrode, and the drain electrode is electrically connected to the second connection electrode through the second contact hole so as to form a complete drain electrode;
• forming a first passivation layer on the dielectric layer, wherein the first passivation layer has a third contact hole at least partially exposing the drain electrode;
• and
• forming a first pixel electrode on the first passivation layer, wherein the first pixel electrode is electrically connected to the drain electrode of the thin film transistor device through the third contact hole.