Dual-semiconductor complementary metal-oxide-semiconductor device

An active semiconductor device, comprising:

• a plurality of semiconductor fins formed on at least a portion of a semiconductor substrate;
• a first dielectric layer formed on at least a portion of an upper surface of the semiconductor substrate, the first dielectric layer filling gaps between adjacent fins;
• a plurality of gate structures formed on an upper surface of the first dielectric layer;
• a channel region formed on the upper surface of the first dielectric layer and under at least a portion of the gate structures, the channel region comprising a first crystalline semiconductor material, the channel region further comprising a second crystalline semiconductor material formed on at least a portion of the upper surface of the first dielectric layer and between the gate structures, the second crystalline semiconductor material encapsulating the first crystalline semiconductor material and filling openings formed between the fins, the channel region being channel region being formed after high-temperature processing used in fabricating the active semiconductor device has been completed;
• and
• source and drain regions formed on the upper surface of the first dielectric layer and between adjacent gate structures, the source and rain regions being spaced laterally from one another.