Three dimensional stacked nonvolatile semiconductor memory

A semiconductor memory device comprising:

• a semiconductor substrate;
• and
• a memory cell array including first and second blocks disposed above a semiconductor substrate side by side in a first direction,
• the first block including a first memory string extending in a second direction perpendicular to the first direction and a second memory string extending in the second direction, the first memory string including a first word line and a first select gate arranged in the second direction, the second memory string including the first word line and a second select gate arranged in the second direction, the first select gate and the second select gate being arranged in the first direction,
• the second block including a third memory string extending in the second direction and a fourth memory string extending in the second direction,
• the third memory string including a second word line and a third select gate arranged in the second direction, the fourth memory string including the second word line and a fourth select gate arranged in the second direction, the third select gate and the fourth select gate being arranged in the first direction, the second select gate and the third select gate being connected electrically.