Vertical memory cell string with dielectric in a portion of the body
AssigneeMicron Technology, Inc.
InventorsHaitao Liu, Akira Goda, Chandra Mouli, Krishna K. Parat
Life of this patent
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Abstract
Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines adjacent to the body, and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate. The dielectric in the portion of the body does not extend along an entire length of the body. Other embodiments are described and claimed.
Claims16
A memory cell string comprising:
- a channel in contact with a source/drain;
- a select gate over the channel;
- an access line over the channel and adjacent to the channel;
- and
- a dielectric formed within a portion of the channel under a portion of the select gate, wherein the dielectric extends within the portion of the channel under the portion of the select gate.
A memory cell string comprising:
- a channel in contact with a source/drain;
- a select gate over the channel;
- an access line over the channel and adjacent to the channel;
- and
- a dielectric formed within a portion of the channel, wherein the dielectric extends within the portion of the channel between a first position of the channel that is located under the select gate and a second position of the channel that is located between the select gate and the access line.
A memory device comprising:
- a string of memory cells comprising
- a channel in contact with a source/drain, the channel being under a select gate and a plurality of access lines adjacent to the select gate;
- and
- a dielectric in a portion of the channel, wherein the dielectric extends within the portion of the channel under a portion of the select gate.
Dependencies are inferred from the claim text.