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US 9,437,607 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwangmin Park, Byongju Kim, Jumi Yun, Jaeyoung Ahn
Life of this patent
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Abstract
A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.
Claims15
A method of manufacturing a semiconductor device comprising:
- alternately forming first material layers and second material layers on a substrate;
- forming a hole through the second material layers and the first material layers and exposing the substrate;
- forming a first tunnel insulation layer on an inner sidewall surface delimiting sides of the hole, forming a second tunnel insulating layer on the first tunnel insulating layer, and forming a third tunnel insulating layer on the second tunnel insulating layer such that the second tunnel insulating layer is located between the first and third tunnel insulating layers, and such that the nitrogen concentration of the third tunnel insulating layer is lower than that of the second tunnel insulating layer and higher than that of the first tunnel insulating layer;
- and
- subsequently forming a semiconductor layer directly on the third tunnel insulation layer so as to be in contact with the third tunnel insulation layer,
- wherein the forming the tunnel insulating layers comprises:
- sequentially forming a first preliminary insulating layer, a second preliminary insulating layer, and a third preliminary insulating layer on the inner sidewall surface delimiting the sides of the hole, and
- performing an oxidation treatment to convert the first preliminary insulating layer, the second preliminary insulating layer, and the third preliminary insulating layer to the first tunnel insulating layer, the second tunnel insulating layer, and the third tunnel insulating layer, respectively,
- the first preliminary insulating layer includes at least one of a silicon oxide layer, a hafnium oxide layer, and an aluminum oxide layer,
- wherein the second and third preliminary insulating layers each include at least one of a silicon oxynitride layer, a hafnium oxynitride layer, and an aluminum oxynitride layer, and
- wherein a nitrogen concentration of the third preliminary insulating layer is higher than that of the second preliminary insulating layer.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- alternately forming first material layers and second material layers on a substrate;
- forming a hole through the second material layers and the first material layers and exposing the substrate;
- forming a first tunnel insulating layer on an inner sidewall surface delimiting sides of the hole, forming a second tunnel insulating layer on the first tunnel insulating layer, and forming a third tunnel insulating layer on the second tunnel insulating layer such that the second tunnel insulating layer is located between the first and third tunnel insulating layers, and such that the nitrogen concentration of the third tunnel insulating layer is lower than that of the second tunnel insulating layer and higher than that of the first tunnel insulating layer;
- and
- subsequently forming a semiconductor layer directly on the third tunnel insulating layer so as to be in contact with the third tunnel insulating layer,
- wherein the forming the tunnel insulating layers comprises forming a first preliminary insulating layer on the inner sidewall surface delimiting the sides of the hole,
- forming a second preliminary insulating layer on the first preliminary insulating layer,
- forming a third preliminary insulating layer, having a nitrogen concentration higher than that of the second preliminary insulating layer, on the second preliminary insulating layer, and
- performing a treatment that decreases the nitrogen concentration of the third preliminary insulating layer relative to that of the second preliminary insulating layer.
6 more elements
Dependencies are inferred from the claim text.