Methods and apparatuses having strings of memory cells including a metal source

A method comprising:

• forming metal silicide source material onto a substrate;
• forming an oxide material over the metal silicide source material;
• doping the metal silicide source material;
• forming a polysilicon select gate material over the oxide material;
• and
• forming a string of floating gate memory cells over the polysilicon select gate material, the string of floating gate memory cells including undoped semiconductor channel material that extends through the polysilicon select gate material and the oxide material to contact the doped metal silicide source material.

A method comprising:

• forming metal silicide source material onto a substrate;
• forming a capping material over the metal silicide source material;
• doping the metal silicide source material;
• forming a select gate material over the capping material;
• and
• forming a vertical string of floating gate memory cells over the select gate material, in a plurality of alternating levels of control gate material and insulator material, wherein forming the vertical string of memory cells comprises forming a vertical undoped semiconductor material coupled to the doped metal silicide source material and adjacent to the select gate material, wherein the floating gates of the vertical string of memory cells and the select gate material are insulated from the vertical undoped semiconductor material by a tunnel dielectric material.