Semiconductor device and method for manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorJunichi Ariyoshi
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Abstract
A semiconductor device includes a substrate, a first well of a first conductivity type formed within the substrate, a second well of a second conductivity type formed underneath the first well within the substrate and a third well of the second conductivity type formed horizontally to the first well within the substrate, and including a first region formed to a first depth from a surface of the substrate, and a second region formed to a second depth greater than the first depth from the surface of the substrate and connected to the second well.
Claims19
A semiconductor device comprising:
- a substrate;
- a first well of a first conductivity type formed within the substrate;
- a second well of a second conductivity type formed underneath the first well within the substrate;
- a third well of the second conductivity type formed horizontally to the first well within the substrate, and that includes a first region and a second region;
- an insulating film formed on the first region;
- and
- a silicide block layer formed above the first well and the third well,
- wherein the first region is located horizontally to the second region;
- a bottom of the second region is located deeper than a bottom of the first region;
- the second region is connected to the first well;
- and
- the insulating film covers over an upper portion of the first region and is not formed on the second region.
A method for manufacturing a semiconductor device comprising:
- forming an insulating film on a substrate;
- forming a first well of a first conductivity type within the substrate;
- forming a second well of a second conductivity type underneath the first well within the substrate;
- forming a third well of the second conductivity type and that includes a first region and a second region, and that is located horizontally to the first well within the substrate;
- and
- forming a silicide block lay er above the first well and the third well,
- wherein the first region is located horizontally to the second region;
- a bottom of the second region is located deeper than a bottom of the first region;
- the second region is connected to the first well;
- and
- the insulating film covers over an upper portion of the first region and is not formed on the second region.
Dependencies are inferred from the claim text.