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US 9,437,593 B2Granted
Silicided semiconductor structure and method of forming the same
AssigneeInfineon Technologies AG
InventorsJiang Yan, Henning Haffner, Frank Huebinger, Sun-Oo Kim, Richard Lindsay, Klaus Schruefer
Life of this patent
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Abstract
A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
Claims19
A semiconductor device comprising:
- a transistor at a surface of a semiconductor body, the transistor comprising:
- a first source/drain region;
- a second source/drain region;
- a channel region between the first and second source/drain regions;
- a gate dielectric overlying the channel region;
- and
- a gate overlying the gate dielectric, the gate comprising a first silicide layer and a metal layer disposed between the gate dielectric and the first silicide layer, the first silicide layer having a first thickness;
- and
- a fuse element disposed at the surface of the semiconductor body, the fuse element comprising a dielectric layer, a polysilicon layer and a second silicide layer having a second thickness that is smaller than the first thickness, wherein the fuse element does not comprise a metal layer having a metal material that is the same as a metal material of the metal layer of the transistor.
6 more elements
A semiconductor device comprising:
- a transistor at a surface of a semiconductor body, the transistor comprising:
- a first source/drain region;
- a second source/drain region;
- a channel region between the first and second source/drain regions;
- a gate dielectric overlying the channel region;
- and
- a gate overlying the gate dielectric, the gate comprising a metal layer, a polysilicon layer, and a silicide layer, the silicide layer having a first thickness;
- and
- a fuse element disposed at the surface of the semiconductor body, the fuse element comprising a polysilicon layer and a silicide layer having a second thickness that is smaller than the first thickness, wherein the fuse element further comprises a dielectric layer between the polysilicon layer and semiconductor body, and wherein a dielectric material of the dielectric layer of the fuse element and a dielectric material of the gate dielectric are the same, wherein the fuse element does not comprise a metal layer having a metal material that is the same as a metal material of the metal layer of the transistor.
6 more elements
A semiconductor device comprising:
- a transistor disposed at a first region of a surface of a semiconductor body, the transistor comprising:
- a first source/drain region;
- a second source/drain region;
- a channel region between the first and second source/drain regions;
- a gate dielectric overlying the channel region;
- and
- a gate overlying the gate dielectric, the gate comprising a first silicide layer and a metal layer disposed between the gate dielectric and the first silicide layer, the first silicide layer having a first thickness;
- and
- a fuse element disposed at a second region of the surface of the semiconductor body, the fuse element comprising:
- an isolation structure located in the semiconductor body;
- a dielectric layer overlying the isolation structure;
- a polysilicon layer overlying the dielectric layer, wherein the polysilicon layer of the fuse element is disposed over and physically contacts the dielectric layer;
- and
- a second silicide layer overlying the polysilicon layer, wherein the fuse element is located adjacent to the transistor such that the isolation structure abuts the first source/drain region, wherein the fuse element does not comprise a metal layer having a metal material that is the same as a metal material of the metal layer of the transistor.
11 more elements
Dependencies are inferred from the claim text.