US 9,437,588 B1 · Middle of-line architecture for dense library layout using M0 hand-shake

Abstract

A dense library architecture using an M0 hand-shake and the method of forming the layout are disclosed. Embodiments include forming first and second active areas on a substrate, at the top and bottom of a cell, separated from each other; forming first through third gate lines perpendicular to the active areas, where the first and third gate lines are dummy gates at the cell edges; forming trench silicide segments on each of the active areas, between the first, second, and third gate lines; forming first and second M1 metal lines between the first and second gate lines and the second and third gate lines, respectively; forming a M0 segment between the first and second active regions perpendicular to the M1 metal lines; forming a CB between the M0 segment and the second gate line; and forming a V0 from the first metal line to the M0 segment.

Claims13

Dependent claims

A method comprising:

forming first and second active areas on a substrate, at top and bottom sides of a cell, separated from each other;
forming first, second, and third gate lines perpendicular to the active areas, where the first and third gate lines comprise dummy gates at the edges of the cell;
forming trench silicide segments on each of the first and second active areas, between the first, second, and third gate lines;
forming first and second M1 metal lines between the first and second gate lines and the second and third gate lines, respectively;
forming a metal 0 (M0) segment between the first and second active regions perpendicular to the M1 metal lines;
forming a gate contact (CB) between the M0 segment and the second gate line;
and
forming a via (V0) from the first metal line to the M0 segment.

5 more elements

A method comprising:

forming first and second active areas on a substrate, at top and bottom sides of a first cell, separated from each other and third and fourth active areas on the substrate, at top and bottom sides of a second cell, separated from each other;
forming a first gate line in the first cell perpendicular to the active areas and a second gate line in the second cell perpendicular to the active areas;
forming a double diffusion break between the first and second cells;
forming trench silicide segments on each of the first, second, third, and fourth active areas, on opposite sides of each of the first and second gate lines;
forming first and second M1 metal lines and third and fourth M1 metal lines on opposite sides of the first and second gate lines, respectively;
forming a first metal 0 (M0) segment between the first and second active areas perpendicular to the M1 metal lines and a second M0 segment between the third and fourth active areas perpendicular to the M1 metal lines;
forming a first gate contact (CB) between the first M0 segment and the first gate line and a second CB between the second M0 segment and the second gate line;
forming a first via (V0) from the first metal line to the first M0 segment and a second V0 from the fourth metal line to the second M0 segment;
and
forming two M0 segments as first and second power rails along top and bottom edges of the first and second cells, perpendicular to the gate lines.

7 more elements

Dependencies are inferred from the claim text.

Middle of-line architecture for dense library layout using M0 hand-shake

Life of this patent

Middle of-line architecture for dense library layout using M0 hand-shake

Life of this patent

Abstract

Claims13