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US 9,437,578 B2Granted
Stacked IC control through the use of homogenous region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-I Hsu, Cheng-Ying Ho, Jeng-Shyan Lin, Feng-Chi Hung, Dun-Nian Yaung
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Abstract
A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad.
Claims20
A package comprising:
- a first semiconductor chip including:
- a first substrate;
- a first plurality of dielectric layers underlying the first substrate;
- a dielectric region penetrating through the first plurality of dielectric layers;
- and
- a first metal pad overlapped by the dielectric region;
- and
- a conductive plug penetrating through the first substrate, the dielectric region, and the first metal pad, wherein an entirety of the dielectric region is underlying the first substrate.
5 more elements
A package comprising:
- a first semiconductor chip comprising:
- a first substrate;
- a first plurality of dielectric layers;
- and
- a homogenous dielectric region in the first plurality of dielectric layers;
- a second semiconductor chip comprising:
- a second substrate;
- a second plurality of dielectric layers over the second substrate, wherein the first plurality of dielectric layers is bonded to the second plurality of dielectric layers;
- and
- a metal pad in one of the second plurality of dielectric layers;
- and
- a conductive plug penetrating through the first substrate and the homogenous dielectric region, and extends to the metal pad.
9 more elements
A method comprising:
- forming a dielectric region penetrating through a plurality of dielectric layers in a first wafer;
- forming a first metal pad aligned to the dielectric region, with the first metal pad comprising a first opening;
- bonding the first wafer to a second wafer;
- etching the first wafer that has the first opening in the first metal pad to form a second opening penetrating through the first wafer and extending into the second wafer, wherein the second opening penetrates through the dielectric region and the first opening in the first metal pad, and wherein a second metal pad in the second wafer is exposed through the second opening;
- and
- filling the second opening with a conductive material to form a conductive plug.
3 more elements
Dependencies are inferred from the claim text.