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US 9,437,573 B2Granted
Semiconductor device and method for manufacturing thereof
AssigneeCypress Semiconductor Corporation
InventorsNaomi Masuda, Masataka Hoshino, Ryota Fukuyama
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Abstract
A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.
Claims4
A method of manufacturing a semiconductor device comprising:
- temporarily bonding a first electrode formed on a mount portion to a second electrode, the second electrode comprising a protrusion formed on a mounted portion, wherein temporarily bonding comprises selectively heating a leading end of the protrusion;
- exposing the first electrode, the second electrode and a solder comprised in a bonding terminal disposed on the first electrode to a reducing gas;
- and
- bonding, subsequent to the temporarily bonding, the first electrode to the second electrode by reflowing the solder on at least part of a side surface of the protrusion with the solder comprised in the bonding terminal, wherein
- the protrusion is formed on the mounted portion by bringing the leading end of the protrusion into contact with the bonding terminal, and
- at least one of the mount portion and the mounted portion comprises a semiconductor chip.
3 more elements
Dependencies are inferred from the claim text.