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US 9,437,563 B2Granted
Bump structures in semiconductor packages and methods of fabricating the same
AssigneeSK hynix Inc.
InventorsTaek Joong Kim, Yong Su Han
Life of this patent
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Abstract
The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.
Claims9
A method of fabricating a bump structure, the method comprising:
- forming an insulation layer on a substrate, the insulation layer being formed to include an opening that exposes an electrode pad on the substrate;
- forming a metal film on the insulation layer and on the opening of the insulation layer;
- forming a mask pattern on the metal film, the mask pattern being formed to include an opening that exposes the metal film on the electrode pad;
- forming a metal post on the metal film exposed by the opening of the mask pattern;
- forming a passivation spacer on a sidewall of the metal post;
- and
- removing the metal film on the insulation layer to form a metal pattern having a vertical sidewall on the electrode pad,
- wherein the vertical sidewall of the metal pattern is formed to include a protrusion that outwardly extends from a sidewall of the metal post.
5 more elements
Dependencies are inferred from the claim text.