Semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising;

• placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
• growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion;
• removing the mask from the substrate after the conductive film is grown, and
• forming the concave portion by forming an insulation film on surfaces of stepped structures which are formed with an interval between the stepped structures.

A manufacturing method of a semiconductor device, comprising:

• placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
• growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion;
• and
• removing the mask from the substrate after the conductive film is grown,
• wherein the concave portion is a groove continuously surrounding an internal region of the top face of the substrate, the internal region being located inside the concave portion, and
• a width of the groove is equal to or more than a sum of a manufacturing error of an opening width of the mask in a width direction of the groove and two times a placing position error of the mask in the width direction of the groove.

A manufacturing method of a semiconductor device, comprising:

• forming a concave portion on a top surface of a substrate by forming an insulation film on surfaces of stepped structures which are formed with an interval between the stepped structures,
• placing a mask having an opening on an external region of the top face of the substrate to locate an end portion of the opening of the mask just above the concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
• growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion;
• and
• removing the mask from the substrate after the conductive film is grown.