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US 9,437,561 B2Granted
Semiconductor chip with redundant thru-silicon-vias
AssigneesAdvanced Micro Devices, Inc., ATI Technologies ULC
InventorsBryan Black, Michael Z. Su, Gamal Refai-Ahmed, Joe Siegel, Seth Prejean
Life of this patent
Estimating the term…
Abstract
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
Claims17
A method of manufacturing, comprising:
- forming a first plurality of conductive vias in a layer of a first semiconductor chip, the first plurality of conductive vias including first ends and second ends;
- forming conductive via extensions on each of the first ends of the first conductive vias;
- and
- forming a first conductor pad in ohmic contact with the conductive via extensions.
1 more element
A method of manufacturing, comprising:
- forming a first plurality of conductive vias in a layer of a first semiconductor chip, the first plurality of conductive vias including first ends and second ends, the first semiconductor chip having a first side and a second and opposite side;
- forming conductive via extensions on each of the first ends of the first conductive vias;
- forming a first conductor structure proximate the first side and in ohmic contact with the conductive via extensions;
- and
- forming a second conductor proximate the second side and in ohmic contact with the second ends of the first plurality of conductive vias.
2 more elements
A method of manufacturing, comprising:
- forming a first plurality of conductive vias in a layer of a first semiconductor chip, the first plurality of conductive vias including first ends, second ends, a polymer core and a conductor jacket around the polymer core;
- and
- forming a first conductor pad in ohmic contact with the first ends of the first conductive vias.
Dependencies are inferred from the claim text.