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US 9,437,546 B2Granted
Method of forming stacked trench contacts and structures formed thereby
AssigneeIntel Corporation
InventorsBernhard Sell, Oleg Golonzka
Life of this patent
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Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
Claims14
A device structure comprising:
- a first gate structure on a substrate, the first gate structure comprising a first gate electrode layer;
- a second gate structure on the substrate, the second gate structure comprising a second gate electrode layer;
- a source /drain region in the substrate between a first side of the first side of the first gate structure and a second side of the second gate structure;
- a first spacer on the first side of the first gate structure and directly adjacent to the first side of the first gate structure;
- a second spacer on the second side of the second gate structure and directly adjacent to the second side of the second gate structure;
- a nitride etch stop layer directly adjacent to the second spacer;
- an interlayer dielectric directly adjacent to the nitride etch stop layer directly adjacent to the second spacer;
- and
- a first contact metal coupled to the source/drain region and in direct contact with the first spacer on the first side of first gate structure and in direct contact with the interlayer dielectric directly adjacent to the nitride etch stop layer directly adjacent to second spacer directly adjacent to the second side of the second gate structure.
6 more elements
A method of forming a device comprising:
- forming a first gate structure comprising a first gate electrode layer and a second gate structure comprising a second gate electrode layer on a substrate;
- forming a source/drain region in the substrate between a first side of a first gate structure and a second side of the second gate structure;
- forming a first spacer on the first side of the first gate structure and directly adjacent to the first side of the first gate structure and a second spacer on the second side of the second gate structure and directly adjacent to the second side of the second gate structure;
- forming a nitride etch stop layer directly adjacent to the second spacer;
- forming an interlayer dielectric directly adjacent to the nitride etch stop layer directly adjacent to the second spacer;
- and
- forming a first contact metal coupled to the source/drain region and in direct contact with the first spacer on the first side of the first gate structure and in direct contact with the interlayer dielectric directly adjacent to nitride etch stop layer directly adjacent to the second spacer on the second side of the second gate structure.
4 more elements
Dependencies are inferred from the claim text.