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US 9,437,524 B2Granted
Through-silicon via with sidewall air gap
AssigneeGlobalfoundries Inc.
InventorsShan Gao, Seung Man Choi
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Abstract
Embodiments of the present invention provide a novel process integration for air gap formation at the sidewalls for a Through Silicon Via (TSV) structure. The sidewall air gap formation scheme for the TSV structure of disclosed embodiments reduces parasitic capacitance and depletion regions in between the substrate silicon and TSV conductor, and serves to also reduce mechanical stress in silicon substrate surrounding the TSV conductor.
Claims11
A semiconductor structure comprising:
- a bulk silicon substrate;
- a through-silicon via formed in the bulk silicon substrate;
- a barrier layer disposed adjacent to the through-silicon via;
- an air gap disposed adjacent to the barrier layer;
- a sealant dielectric layer disposed below the air gap, wherein the sealant dielectric layer seals the air gap;
- and
- a conductor region disposed within the sealant dielectric layer.
4 more elements
Dependencies are inferred from the claim text.