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US 9,437,484 B2Granted
Etch stop layer in integrated circuits
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
Life of this patent
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Abstract
An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
Claims20
A method comprising:
- forming an etch stop layer over a first dielectric layer, wherein the forming the etch stop layer comprises:
- forming a metal nitride layer over the first dielectric layer;
- and
- performing a treatment on the metal nitride layer using an oxygen-containing gas or a carbon-containing gas, wherein a top surface layer of the metal nitride layer is converted to a second sub layer of the etch stop layer, and a bottom layer of the metal nitride layer remains untreated to act as a first sub layer of the etch stop layer;
- forming a second dielectric layer over the etch stop layer;
- etching the second dielectric layer, wherein the etching is stopped on the etch stop layer;
- and
- etching through the etch stop layer.
5 more elements
A method comprising:
- forming an etch stop layer over a first dielectric layer, the forming the etch stop layer comprising:
- depositing a first sub layer comprising a metal-and-carbon-containing compound over the first dielectric layer;
- forming a second sub layer overlying the first sub layer, wherein the second sub layer comprises metal nitride;
- and
- forming a third sub layer overlying the second sub layer, wherein the third sub layer comprises a metal compound comprising an element selected from carbon and oxygen;
- forming a second dielectric layer over the etch stop layer;
- etching through the second dielectric layer and the etch stop layer;
- and
- forming a via extending into the second dielectric layer and the etch stop layer.
6 more elements
A method comprising:
- forming a metal line in a first low-k dielectric layer;
- forming a metal capping layer over and contacting the metal line;
- forming an etch stop layer over the metal capping layer and the first low-k dielectric layer, the forming the etch stop layer comprising:
- depositing a carbon-containing dielectric layer as a first sub layer, with the first sub layer contacting the metal capping layer, wherein the first sub layer is free from oxygen;
- depositing a metal nitride layer as a second sub layer over the first sub layer, wherein the metal nitride layer is substantially free from oxygen and carbon;
- and
- performing a treatment on a top portion of the second sub layer to convert the top portion into a third sub layer;
- forming a second low-k dielectric layer over and contacting the etch stop layer;
- etching-through the second low-k dielectric layer and the etch stop layer;
- and
- forming a via extending into the second low-k dielectric layer and the etch stop layer, with a bottom of the via in contact with the metal capping layer.
8 more elements
Dependencies are inferred from the claim text.