Methods for forming an interconnect pattern on a substrate
AssigneeApplied Materials, Inc.
InventorsSuketu A. Parikh, Mehul Naik
Life of this patent
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Abstract
Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate; removing a portion of the porous dielectric layer; removing the plurality of spacers to form features in the porous dielectric layer; and etching the cap layer to extend the features through the cap layer.
Claims18
A method for forming an interconnect pattern atop a substrate, comprising:
- depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
- selectively depositing a photoresist layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
- subsequently removing a portion of the porous dielectric layer;
- removing the plurality of spacers to form features in the porous dielectric layer;
- and
- etching the cap layer to extend the features through the cap layer.
A method for forming an interconnect pattern atop a substrate, comprising:
- depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer such that one or more voids are formed within the porous dielectric layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
- selectively depositing a photoresist layer atop the porous dielectric layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
- removing a portion of the porous dielectric layer through the photoresist layer;
- removing the plurality of spacers to form features in the porous dielectric layer;
- and
- etching the cap layer to extend the features through the cap layer.
A computer readable medium, having instructions stored thereon that, when executed, cause a method for etching features into a substrate to be performed, the method comprising:
- depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
- selectively depositing a photoresist layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
- subsequently removing a portion of the porous dielectric layer;
- removing the plurality of spacers to form features in the porous dielectric layer;
- and
- etching the cap layer to extend the features through the cap layer.
Dependencies are inferred from the claim text.