Pattern forming method
AssigneeKabushiki Kaisha Toshiba
InventorMakoto Aida
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Abstract
In one embodiment, a pattern forming method includes forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion. The method further includes forming a photosensitive second film on the first film so as to cover the upper end of the convex portion. The method further includes exposing the second film to light. The method further includes developing the second film with a development liquid to form a second pattern of the second film. The method further includes dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film.
Claims20
A pattern forming method comprising:
- forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion;
- forming a photosensitive second film on the first film so as to cover the upper end of the convex portion;
- exposing the second film to light;
- developing the second film with a development liquid to form a second pattern of the second film;
- and
- dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film.
A pattern forming method comprising:
- forming a first film on a substrate that includes a convex portion and first and second concave portions so as to expose an upper end of the convex portion;
- forming a photosensitive second film on the first film so as to cover the upper end of the convex portion;
- exposing the second film to light and developing the second film to form a second pattern of the second film;
- removing the first film exposed from the second pattern to form a first pattern of the first film;
- implanting first ions into the substrate at a bottom of the first concave portion by using the first and second patterns as a mask;
- forming a third film on the substrate so as to expose the upper end of the convex portion;
- forming a fourth photosensitive film on the third film so as to cover the upper end of the convex portion;
- exposing the fourth film to light and developing the fourth film to form a fourth pattern of the fourth film;
- removing the third film exposed from the fourth pattern to form a third pattern of the third film;
- and
- implanting second ions into the substrate at a bottom of the second concave portion by using the third and fourth patterns as a mask.
A pattern forming method comprising:
- preparing a substrate including a first region that includes first convex portions at a first density and a second region that includes second convex portions at a second density lower than the first density;
- forming a first film on the substrate so as to expose upper ends of the first and second convex portions;
- forming a photosensitive second film on the first film so as to cover the upper ends of the first and second convex portions;
- exposing the second film to light and developing the second film to form a second pattern of the second film;
- and
- removing the first film exposed from the second pattern to form a first pattern of the first film.
Dependencies are inferred from the claim text.