Method of manufacturing semiconductor device including air gap between patterns
AssigneeKabushiki Kaisha Toshiba
InventorsKeisuke Nakazawa, Ichiro Mizushima, Shinichi Nakao
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Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a pattern portion and a flat portion on a substrate, the pattern portion including plural patterns, and the flat portion having a flat surface at a position lower than upper surfaces of the patterns. The method further includes transferring a first film on the substrate to continuously form the first film on the upper surfaces of the patterns and on the flat surface of the flat portion and to form a first air gap between the patterns.
Claims18
A method of manufacturing a semiconductor device, comprising:
- forming a pattern portion and a flat portion on a substrate, the pattern portion including plural patterns, and the flat portion having a flat surface at a position lower than upper surfaces of the patterns;
- and
- transferring a first film on the substrate to continuously form the first film on the upper surfaces of the patterns and on the flat surface of the flat portion and to form a first air gap between the patterns.
A method of manufacturing a semiconductor device, comprising:
- forming plural first patterns and one or more second patterns on a substrate, the first patterns being capable of functioning as transistors, and the second patterns being formed of the same material as the first patterns, being formed between the first patterns, and being incapable of functioning as transistors, and
- transferring a first film on the substrate to continuously form the first film on the first and second patterns and to form an air gap between mutually adjacent patterns among the first and second patterns.
Dependencies are inferred from the claim text.