Back to results
US 9,437,455 B2Granted
Manufacturing method for semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorNorihiro Togawa
Life of this patent
Estimating the term…
Abstract
A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.
Claims6
A manufacturing method for a semiconductor device, comprising:
- introducing an impurity into a SiC substrate;
- forming a mixed material layer directly on a surface of the SiC substrate into which the impurity is introduced, the mixed material layer is formed before the impurity introduced into the SiC substrate is activated, the mixed material layer is made of a resin and a fibrous carbon material;
- performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate;
- and
- removing the mixed material layer after the heat treatment.
2 more elements
A manufacturing method for a semiconductor device, comprising:
- introducing an impurity into a SiC substrate;
- forming a mixed material layer on a surface of the SiC substrate into which the impurity is introduced, the mixed material layer is made of a resin and a fibrous carbon material;
- performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate;
- and
- removing the entire mixed material layer after the heat treatment.
2 more elements
Dependencies are inferred from the claim text.