Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides

A SIT method, the method comprising the steps of:

• depositing an SIT mandrel material directly onto a stack of thin films comprising a hardmask material, the SIT mandrel material being a silicon material etched selective to the stack of thin films;
• forming a patterned resist on the SIT mandrel material, wherein the patterned resist has a line pattern defined therein;
• transferring the line pattern from the patterned resist to the SIT mandrel material, forming a plurality of SIT mandrels;
• conformally depositing a spacer material directly onto the stack of thin films and covering a top and sides of each of the SIT mandrels, wherein the spacer material is selected from the group consisting of a metal, a metal oxide, a metal nitride and combinations comprising at least one of the foregoing materials;
• removing the spacer material from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels;
• removing the SIT mandrels selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers;
• modifying the pattern of the SIT sidewall spacers following removal of the SIT mandrels, wherein the step of modifying the pattern of the SIT sidewall spacers comprises reducing a length of one or more of the SIT sidewall spacers;
• and
• transferring the pattern of the SIT sidewall spacers to one or more layers in the stack of thin films comprising the hardmask material,
• wherein the spacer material comprises a metal selected from the group consisting of platinum, ruthenium, iron, nickel, and combinations comprising at least one of the foregoing metals.