Method for manufacturing a semiconductor device

A method for forming a semiconductor device, the method comprising:

• forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas;
• forming a support structure mechanically connecting the semiconductor mesas;
• and
• processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure;
• and
• wherein the support structure is formed to partially cover the upper side of the semiconductor substrate and partially expose the upper side of the semiconductor substrate, and wherein processing the semiconductor substrate comprises performing semiconductor processing on material that is underneath the support structure.