Back to results
US 9,437,437 B2Granted
Method for producing semiconductor device by plating processing
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Wakatsuki, Atsuko Sakata
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a method for producing a semiconductor device includes forming a base film above a semiconductor substrate, forming a core above the base film, forming a side wall film on a side face of the core, and replacing at least part of the side wall film with a metal film by performing plating processing.
Claims12
A method for producing a semiconductor device, comprising:
- forming a base film above a semiconductor substrate;
- forming a core above the base film;
- forming a side wall film on a side face of the core;
- replacing at least part of the side wall film with a metal film by performing plating processing;
- and
- removing the core after the plating processing.
3 more elements
A method for producing a semiconductor device, comprising:
- forming a base film above a semiconductor substrate;
- forming a pattern above the base film, the pattern comprising a plurality of core structures having a pitch with a length “a”;
- forming a silicon film on a side wall of each of the core structures;
- and
- plating each of the core structures to replace at least a portion of the silicon film with a metal film to form a wiring pattern.
2 more elements
A method for producing a semiconductor device, comprising:
- forming a base film above a semiconductor substrate;
- forming a pattern above the base film including a plurality of core structures having a pitch “a”;
- forming a silicon film on a side wall of each of the core structures;
- and
- forming a wiring pattern having a pitch of a/2 by replacing at least a portion of the silicon film on the side wall of each of the core structures with a metal film.
2 more elements
Dependencies are inferred from the claim text.