Replacement metal gate FinFET
AssigneeInternational Business Machines Corporation
InventorsHemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
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Abstract
A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.
Claims5
A field effect transistor (FET) device, comprising:
- a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region;
- a hardmask layer disposed on the top surface of the fin, over the channel region;
- a gate stack formed on the hardmask layer, the gate stack comprising a gate dielectric material having a U-shape that is arranged along sidewalls and a bottom surface of the gate stack;
- and
- sidewall spacers adjacent sidewalls of the gate stack, wherein bottom surfaces of the sidewall spacers are formed over the hardmask layer, and portions of the gate dielectric material are arranged between the sidewall spacers and the hardmask layer.
Dependencies are inferred from the claim text.