Method and apparatus for cooling wafer in ion implantation process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Yuan Ho, Jung-Wei Lee, Ming-Te Chen
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Abstract
Embodiments of method for cooling a wafer in an ion implantation process are provided. A method for cooling the wafer in the ion implantation process includes placing the wafer in a process module. The method also includes performing the ion implantation process on the wafer and simultaneously cooling the wafer in the process module. The method further includes removing the wafer from the process module. In addition, the method includes heating up the wafer.
Claims17
A method for cooling a wafer in an ion implantation process, comprising:
- placing the wafer in a process module;
- performing the ion implantation process on the wafer and simultaneously cooling the wafer in the process module;
- providing the coolant to the process module via a first segment of flexible coolant pipe;
- removing the coolant from the process module via a second segment of flexible coolant pipe;
- wherein the first segment and the second segment of the flexible coolant pipe are arranged about a rotation axis in a spiral manner, and the coolant has a temperature in a range from about −30° C. to about −50° C.;
- rotating the wafer about the rotation axis while the ion implantation process is performed, wherein each of the first segment and the second segment of flexible coolant pipe approaches toward or is away from the rotation axis during the rotation of the wafer;
- removing the wafer from the process module;
- and
- heating up the wafer.
A method for cooling a wafer in an ion implantation process, comprising:
- pre-cooling the wafer in a pre-cooling module before the ion implantation process;
- placing the wafer on a wafer holder;
- performing the ion implantation process on the wafer and simultaneously cooling the wafer holder;
- providing a coolant to the wafer holder via a first segment of flexible coolant pipe to directly cool the wafer;
- removing the coolant from the wafer holder via a second segment of flexible coolant pipe;
- wherein the first segment and the second segment of the flexible coolant pipe are arranged about a rotation axis in a spiral manner, and the coolant has a temperature in a range from about −30° C. to about −50° C.;
- rotating the wafer about the rotation axis while the ion implantation process is performed, wherein each of the first segment and the second segment of flexible coolant pipe approaches toward or is away from the rotation axis during the rotation of the wafer;
- removing the wafer from the wafer holder;
- and
- heating up the wafer in a loadlock chamber.
Dependencies are inferred from the claim text.