Self-compensating oxide layer

A method of doping a workpiece, comprising:

• amorphizing portions of the workpiece by implanting a first species into the workpiece, wherein implanted portions of the workpiece become amorphized regions and a remainder of the workpiece remains crystalline;
• exposing the workpiece to oxygen after the amorphizing, wherein the amorphized regions of the workpiece are converted to a silicon oxide layer, wherein a thickness of the silicon oxide layer is greater on certain surfaces of the workpiece based on orientation of the surfaces;
• implanting a dopant species into the workpiece after the exposing such that the dopant species travel through the silicon oxide layer to reach a crystalline portion of the workpiece disposed beneath the silicon oxide layer;
• and
• removing the silicon oxide layer.

A method of creating a conformally doped structure on a workpiece, comprising:

• amorphizing at least one horizontal surface and at least one non-horizontal surface of a structure on a workpiece by implanting a first species into the structure, wherein implanted regions of the structure become amorphized regions and a remainder of the structure remains crystalline;
• exposing the structure to oxygen after the amorphizing, wherein the amorphized regions of the structure are converted to a silicon oxide layer;
• implanting a dopant species into the structure after the exposing such that ions of the dopant species travel through the silicon oxide layer to reach a crystalline portion of the structure disposed beneath the silicon oxide layer;
• and
• removing the silicon oxide layer from the structure.