Electronic device manufacture
AssigneeRohm and Haas Electronic Materials LLC
InventorsPeter Trefonas, III, Dong Won Chung
Life of this patent
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Abstract
New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image.
Claims8
A method for fabricating an electronic device, comprising:
- (a) providing a chemically-amplified positive-acting photoresist relief image on a substrate;
- (b) applying a curable composition over the photoresist relief image to provide a composite of the photoresist and curable composition, wherein the curable composition comprises a silicon-containing component;
- (c) treating the composite to provide relief image of photoresist encased by curable composition;
- (d) exposing the composite to activating radiation to permit hardening of the curable composition and then development to remove the photoresist, wherein the curable composition crosslinks in presence of acid that migrates from the photoresist,
- wherein following removing the photoresist, the curable composition remains in a relief image of decreased pitch relative to the photoresist.
A method for fabricating an electronic device, comprising:
- (a) applying a chemically-amplified positive-acting photoresist on a substrate surface;
- (b) exposing the photoresist to patterned activating radiation and developing the exposed material to provide a positive photoresist relief image;
- (c) applying a curable organic composition over the positive relief image to provide a composite of the photoresist and curable composition, and wherein the curable organic composition comprises a silicon-containing component;
- (d) curing the curable organic composition of the composite whereby the organic composition crosslinks in the presence of acid that crosslinks in the presence of acid that migrates from the photoresist;
- (e) treating the composite to provide a relief image of photoresist encased by the curable composition;
- (f) exposing the composite to activating radiation to permit hardening of the curable organic composition and then development to remove the photoresist,
- wherein following removing the photoresist, the curable organic composition remains in a relief image of decreased pitch relative to the previously developed photoresist.
Dependencies are inferred from the claim text.