Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYasushi Kurosawa, Shigeyoshi Netsu, Naruhiro Hoshino
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYasushi Kurosawa, Shigeyoshi Netsu, Naruhiro Hoshino
Estimating the term…
In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.
A polycrystalline silicon manufacturing apparatus comprising a reactor whose inside is sealed by a bell jar and a disc-like base plate, wherein
Dependencies are inferred from the claim text.