Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• a process of transferring a substrate into a processing chamber;
• a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate;
• a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process;
• a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×1020 atom/cm3 or less on the substrate, after the first purging process;
• and
• a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas.